Solid state power amplifier |
Parameter | Value | Unit | Comment |
Centre frequency2 | 16.8 | GHz | |
Peak output power(Psat)3 | 100 | W | |
50dBm bandwidth | 1000 | MHz | |
Power variation with case temperature | ±1.0 | dB | -30°C to +70°C |
Nominal RF input power | +20±1 | dBm | |
Small-signal gain | 35 | dB | |
Power added efficiency | 27 | % | |
Duty cycle(max)4 | 20 | % | |
Pulse width(max)4 | 100 | µs | |
PRF(max)4 | 500 | kHz | |
Pulse rise/fall time(max) | 60 | ns | |
Power supply | +40V, 4A +8V, 2A | 25% duty cycle | |
Size5 | 130 x120 x20 | mm | Excluding heat-sink and connectors |
Weight(approx) | 650 | g | Excluding heat-sink |
Interface RF input/output | SMA(M/F) | ||
Operating temperature6 | -30 to+70 | °C | Internally monitored |
Amplifier/pulse control | LVCMOS | Amplifier on/off | |
Control interface | 15 | way | MDM connector |
Parameter | Value | Unit | Comment |
Centre frequency | 2-6 | GHz | |
Peak output power(Psat) | 49 | dBm | Typically >50dBm |
Peak CW power(Psat) | 47.8 | dBm | Typically >49dBm at 2 - 5GHz |
Nominal RF input power | 35 | dBm | Without optional pre-driver |
Small-signal gain | 30 | dB | Higher gain options available |
Small-signal gain variation | 5 | dB | |
Duty cycle(max) | 80 | % | Pulsed operation |
Pulse width (max) | 100 | µs | Pulsed operation |
Power supply | 40 - 50 | V | Quiescent current 2A nom. Max current 7A |
Size | 130 x 120 x 20 | mm | Excluding heat-sink and connectors |
Weight (approx) | 650 | g | Excluding heat-sink |
Interface RF input/output | SMA (M/F) | ||
Amplifier/pulse control | LVCMOS | Amplifier on/off | |
Operating temperature range | -40 to +85 | °C |
Parameter | Value | Unit | Comment |
Centre frequency | 8.5 | GHz | Nominal |
50dBm bandwidth | 1700 | MHz | |
Peak output power(Psat) | 120 | W | Typical |
Maximum duty cycle | 30 | % | |
Pulse width | 100 | µs | |
PRF | 500 | kHz | |
Pulse rise/fall time | 50 | ns | |
Power added efficiency (PAE) | 25 | % | Minimum |
Input RF power | 18.5 | dBm | |
Power supply voltage | 40 | V | |
Size | 130 x 120 x 20 | mm | Excluding heat-sink and connectors |
Weight (approx) | 650 | g | Excluding heat-sink |
Interface RF input/output | SMA (M/F) | ||
Amplifier/pulse control | LVCMOS | Amplifier on/off | |
Operating temperature range | -40 to +85 | °C |
Parameter | Value | Unit | Comment |
Centre frequency | 9.6 | GHz | Nominal |
Bandwidth | 800 | MHz | Typical |
Peak output power(Psat) | 200 | W | Minimum |
Duty cycle | 20 | % | Maximum |
Pulse width (max) | 100 | µs | |
PRF | 500 | kHz | Maximum |
Pulse rise/fall time | 50 | ns | Maximum |
Power added efficiency (PAE) | 22 | % | Minimum |
Input RF power | 2 | dBm | |
Power supply voltage | 40 | VDC | |
Size | 146 x 146 x 44 | mm | Excluding heat-sink and connectors |
Weight (approx) | 1700 | g | Excluding heat-sink |
Interface DC power and control | D-Sub | Micro-D option available | |
Interface RF input/output | SMA/N | ||
Amplifier/pulse control | LVCMOS | Amplifier on/off | |
Operating temperature range | -40 to +85 | °C |
Parameter | Value | Unit | Comment |
Centre frequency | 9.2 | GHz | Nominal |
50dBm bandwidth | 600 | MHz | |
Peak output power(Psat) | 300 | W | Typical |
Nominal RF Input power | 0±1 | dBm | |
Small-signal Gain | 56 | dB | |
PRF | 5 | kHz | |
Pulse rise/fall time(max) | <50 | ns | |
Power added efficiency (PAE) | 30 | % | Typical |
Duty cycle (max) | 15 | % | |
Power supply | +40,3A | 15% duty cycle | |
Size | 220 x 150 x 41 | mm | Excluding heat-sink and connectors |
Weight (approx) | 1900 | g | Excluding heat-sink |
Interface RF input/output | SMA/N | ||
Amplifier/pulse control | LVCMOS | Amplifier on/off | |
Operating temperature range | 0 to +60 | °C | |
Control/Power Interface | D sub |
Parameter | Value | Unit | Comment |
Centre frequency | 8.9 | GHz | Nominal |
Bandwidth | 950 | MHz | Typical |
Peak output power(Psat) | 400 | W | Minimum |
Duty cycle | 15 | % | Maximum |
Pulse width (max) | 100 | µs | |
PRF | 500 | kHz | Maximum |
Pulse rise/fall time | 50 | ns | Maximum |
Power added efficiency (PAE) | 22 | % | Minimum |
Input RF power | 2 | dBm | |
Power supply voltage | 40 | VDC | |
Size | 146 x 146 x 44 | mm | Excluding heat-sink and connectors |
Weight (approx) | 1700 | g | Excluding heat-sink |
Interface RF input/output | SMA/N | ||
Amplifier/pulse control | LVCMOS | Amplifier on/off | |
Operating temperature range | -40 to +85 | °C |
Parameter | Value | Unit | Comment |
Centre frequency | 9.5 | GHz | Nominal |
Bandwidth | 950 | MHz | Typical |
Peak output power(Psat) | 1000 | W | Minimum |
Duty cycle | 15 | % | Maximum |
Pulse width (max) | 100 | µs | |
PRF | 500 | kHz | Maximum |
Pulse rise/fall time | 50 | ns | Maximum |
Power added efficiency (PAE) | 22 | % | Minimum |
Input RF power | 2 | dBm | |
Power supply voltage | 40 | VDC | |
Size | 255 x 146 x 44 | mm | Excluding heat-sink and connectors |
Weight (approx) | 3000 | g | Excluding heat-sink |
Interface RF input/output | SMA/N | ||
Interface Amplifier Control | Micro-D Type | Other connection options available | |
Amplifier/pulse control | LVCMOS | Amplifier on/off | |
Operating temperature range | -40 to +85 | °C |
Specification | Min | Typ | Max | Unit |
RF frequency | 70 | 110 | GHz | |
Linear gain | 15 | dB | ||
Psat | 22 | dBm | ||
Input level drive | 15 | dBm | ||
Supply voltage | 13 | 16 | V | |
Current under drive | 205 | mA | ||
Bias current | 97 | mA | ||
Interfaces | WR-10/WM-2540 , UG-387/U |
Specification | Min | Typ | Max | Unit |
RF frequency | 85 | 95 | GHz | |
Linear gain | 15 | dB | ||
Psat | 29 | dBm | ||
Input level drive | 20 | dBm | ||
Supply voltage | 13 | 16 | V | |
Current under drive | 390 | mA | ||
Bias current | 210 | mA | ||
Interfaces | WR-10/WM-2540 , UG-387/U |